Correlation of size and oxygen bonding at the interface of Si nanocrystal in Si–SiO2 nanocomposite: A Raman mapping study

Raman spectroscopy/mapping is used to investigate the variation of Si phonon wavenumbers, i.e., lower wavenumber (LW ~ 495–510 cm⁻¹) and higher wavenumber (HW ~ 515–519 cm⁻¹) phonons, observed in Si–SiO₂ multilayer nanocomposite (NCp) grown using pulsed laser deposition. Sensitivity of Raman spectroscopy as a local probe to surface/interface is effectively used to show that LW and HW phonons originate at surface (Si–SiO₂ interface) and core of Si nanocrystals, respectively. The consistent picture of this understanding is developed using Raman spectroscopy monitored laser heating/annealing and cooling experiment at the site of the desired wavenumber, chosen with the help of Raman mapping. Raman spectra calculations for Si₄₁ cluster with oxygen and hydrogen termination show strong mode at 512 cm⁻¹ for oxygen terminated cluster corresponding to the vibration of surface Si atoms. This supports our attribution of LW phonons to be originating at the Si–SiO₂ surface/interface. These results along with XPS show that nature of interface (oxygen bonding) in turn depends on the size of nanocrystals and LW phonons originate at the surface of smaller Si nanocrystals. The understanding developed can conclude the ongoing debate on large variation in Si phonon wavenumbers of Si–SiO₂ NCps in the literature. Copyright © 2015 John Wiley & Sons, Ltd.     

单晶ZnO、TiO_2纳米线拉伸力学特性的分子动力学研究

采用分子动力学方法,模拟了不同加载速度、不同温度下单晶ZnO、TiO_2纳米线的拉伸破坏过程.通过模拟结果,对比、分析了两种单晶金属氧化物纳米线拉伸力学特性的差异.研究表明,1)ZnO纳米线的断裂机制为:表面微裂纹-微孔-微裂纹与微孔贯穿-断裂,而TiO_2纳米线的断裂机制为:局部屈服-颈缩-断裂;2)TiO_2纳米线的承载能力优于ZnO纳米线,而承受变形的能力劣于ZnO纳米线;3)温度较低的情况下,纳米线的抗拉性能较好;加载速度越高,纳米线的抗载性能越好,而抗变形能力越差.     

Ce_3Rh_3Si_2和CeRh_3Si_2的磁性模拟和晶场效应研究

根据晶场理论,通过对D.Kaczorowski等人测量的磁化率倒数与温度关系曲线的模拟,得到了稀土化合物CeRh3Si2和Ce3Rh3Si2的晶场分裂能和相应波函数.对于CeRh3Si2和Ce3Rh3Si2,它们的第一激发能和总的激发能分别为176K,855K和77.5K,428K.计算表明,Kramers离子Ce3+在晶场效应的作用下,基态简并部分消除得到了三个双重态,模拟得到的化合物的磁化率倒数与温度关系曲线与实验曲线吻合较好.     

A Simple X-ray Spectrometer and PC-based Data Acquisition System for Newly Developed X-ray Source Based on Laser Compton Scattering

A simple X-ray spectrometer and a PC-Based Data Acquisition System(DAS) have been developed newly in Shanghai Institute of Applied Physics(SINAP),Chinese Academy of Sciences (CAS) for the measurement of the X-ray source generated using laser Compton scattering.The system consists of liquid nitrogen cooled high resolution Si(Li) detector,electronics and a DAQ.The Si(Li) detector was designed and made by Center of Advanced Instruments in SINAP,CAS,it allows us to measure X-rays with the energy up to 60 keV and the energy resolution(FWHM) of 184 eV at 5.9 keV.We measured the system uncertainty was 0.2 eV and time drifting of detector was 0.05% both at 5.9 keV.The DAQ was based on Object-Oriented software LabVIEW 7.1,it has data on-line analysis and original data saved functions.     

Optical modulator using metal-oxide-semiconductor type Si ring resonator

Electric-field drive optical modulators using a Si ring resonator were fabricated on silicon-on-insulator (SOI) wafers. The fabricated resonators consisted of Si waveguides with width and thickness of 1.0 and 0.3 μm, respectively. In order to induce the linear electro-optic (EO) effect in the Si core layer, the strain was applied by covering the layer with Si₃N₄ film (0.26 μm thick) deposited by low pressure chemical vapor deposition (LPCVD) at 750 °C. The vertical electric-field was applied to the Si waveguide through the top and bottom cladding layers, and the optical output from the drop port at the resonance wavelength was measured. At a wavelength of 1501.6 nm, the optical modulation of 33% was obtained at 200V (electric-field at the silicon surface ∼3 × 10⁵ V/cm, nearly the breakdown field). The resonance wavelength was shifted toward the short wavelength side by applying both positive and negative voltages, this shift was explained by carrier concentration modulation. The linear EO effect in the Si core layer was not observed, presumably because the strain in the Si core layer was too small.     

Spectroscopic ellipsometry of very thin tantalum pentoxide on Si

Variable angle spectroscopic ellipsometry of very thin T₂O₅ layers on Si and the previously published appropriate algorithm for data interpretation have been successfully applied in terms of accurate characterization of very thin T₂O₅/Si systems. The simulation procedure following a simple three and four layered model was used assuming an existence of inhomogeneous interfacial layers. Quantitative determination of the thicknesses and composition identification were achieved, both for the top T₂O₅ layer and for an interfacial layer. The constituents in the interfacial layer and its depth profiles were recognized.     

Uv Dye Lasers

The moat important property of visible dye lasere, that is continuous wave length tuning, stimulated the search for dyes capable to lase UV. And they were founed in 1668¹. Now the need In tunable UV laeers for applications in spectroacopy, photochemistry, isotope separation, remote air and sea probing, etc. ie only more clearly Been. The object of thie paper is to review shortly some recent advances In UV dye lasers.     

Syntheses and characterization of a new class of mono‐ and heterodinuclear derivatives of boron derived from Schiff bases

Reactions of 2‐isopropoxy‐1, 3, 2‐ benzodioxaborole with equivalent amounts of Schiff base ligands having two hydroxyl groups ( 1a–3a ) yield mononuclear derivatives with one residual hydroxy group. The reactions of these mononuclear derivatives with hexamethyldisilazane in a 2:1 ratio yield heterodinuclear derivatives. All these newly synthesized derivatives have been characterized by elemental analyses and molecular weight measurements. Tentative structures have been proposed on the basis of IR and NMR (¹H, ¹³C, ¹¹B,²⁹Si)spectral data and Fab‐mass studies. Schiff bases and their corresponding mono‐ and heterodinuclear derivatives of boron have also been screened for antifungal activities. Copyright © 2010 John Wiley & Sons, Ltd.     

RE2O3-Al2O3-SiO2玻璃连接氮化硅合成复相陶瓷的研究

采用Ｙ２Ｏ３－Ａｌ２Ｏ３－ＳｉＯ２－Ｘ稀土玻璃进行氮化硅复相陶瓷的连接。用四点弯曲方法测定不同连接工艺下的连接强度。并对连接界面进行ＳＥＭ、ＥＰＭＡ和ＸＲＤ分析。液相钎料玻璃在界面上与氮化硅反应，形成氮化硅／Ｓｉ２Ｎ２Ｏ／Ｙ（Ｌａ）－Ｓｉａｌｏｎ玻璃／Ｙ（Ｌａ）－Ｓｉａｌｏ玻璃的梯度层界面。接头强度随着保温时间、妆温度的增加，先增后。 在ＹＡＳ钎料中添加氧化镧，可以提高接头的高温强度。ＬａＹＯ３的